SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device in which resistance of a gate electrode is decreased without an increase in an area of the silicon carbide semiconductor device.SOLUTION: A silicon carbide semiconductor device comprises: a substrate 1 composed of a first conductivity type silicon carbide; a first conductivity type drift layer 2a formed on a top face of the substrate 1; second conductivity type base regions 3 formed on a top face of the drift layer 2a; first conductivity type source regions 4 formed on top faces of the base regions 3; a gate insulation film 6 formed on lateral faces and an under surface of a trench 5 which pierces the base region 3 and the source region 4; a gate electrode 7 which is embedded in the trench 5 via the gate insulation film 6 and has a top face located above a top face of the source region 4; and a source electrode 9 formed on the top face of the source region 4. A first width A of the gate electrode 7 at a position sandwiched by the source regions 4 is equal to or larger than a second width B at a position above the top faces of the source regions 4.SELECTED DRAWING: Figure 1