| 发明名称 |
BIPOLAR JUNCTION TRANSISTORS WITH DOUBLE-TAPERED EMITTER FINGERS |
| 摘要 |
Device structures for a bipolar junction transistor and methods of fabricating a device structure for a bipolar junction transistor. A base layer comprised of a first semiconductor material is formed. An emitter layer comprised of a second semiconductor material is formed on the base layer. The emitter layer is patterned to form an emitter finger having a length and a width that changes along the length of the emitter finger. |
| 申请公布号 |
US2016372548(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201514745764 |
申请日期 |
2015.06.22 |
| 申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Ding Hanyi;Jain Vibhor;Joseph Alvin J.;Stamper Anthony K. |
| 分类号 |
H01L29/08;H01L29/66;H01L29/10;H01L29/73 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a device structure for a bipolar junction transistor, the method comprising:
forming a base layer comprised of a first semiconductor material; forming an emitter layer comprised of a second semiconductor material on the base layer; and patterning the emitter layer to form a first emitter finger having a length and a width that changes along the length of the first emitter finger. |
| 地址 |
GRAND CAYMAN KY |
