METHOD FOR CLEANING WAFER

摘要

A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.

主权项

1. A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern, the method at least comprising:
a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying, the protective film forming chemical liquid being a chemical liquid containing a water-repellent protective film forming agent for forming a water-repellent protective film at least on the surface of the recessed portion, the cleaning liquid being acidic if the protective film forming chemical liquid is basic, or being basic if the protective film forming chemical liquid is acidic.