发明名称 PROCESS FOR PREPARING A TIO/GAAS STRUCTURE
摘要 <p>The invention relates to a process for preparing a photosensitive structure of TiOdeposited on a GaAs support. According to the invention, the process consists in depositing a thin TiOcoat on a monocrystalline GaAs substrate using the sol-gel method, followed by a thermal treatment at 800°C, for 2 h; Au-Ge electrodes are deposited on the GaAs face and Au electrodes on the TiOface by vacuum evaporation; the soldering is performed with molten indium on the Au-Ge/GaAs face and with indium wire on the Au/TiOface, in air, at 200...250°C. At the end, the assembly of the sensitive structure is sealed, on a cup-shaped base support TO39, with glass cover.</p>
申请公布号 RO123630(B1) 申请公布日期 2015.02.27
申请号 RO20060000736 申请日期 2006.09.22
申请人 INSTITUTUL NA&Tcedil,IONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR 发明人 CERNEA MARIN;GHI&Tcedil,&Abreve, RODICA;NEGRIL&Abreve, CONSTANTIN C&Abreve,T&Abreve,LIN
分类号 H01L21/033 主分类号 H01L21/033
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