发明名称 |
PROCESS FOR PREPARING A TIO/GAAS STRUCTURE |
摘要 |
<p>The invention relates to a process for preparing a photosensitive structure of TiOdeposited on a GaAs support. According to the invention, the process consists in depositing a thin TiOcoat on a monocrystalline GaAs substrate using the sol-gel method, followed by a thermal treatment at 800°C, for 2 h; Au-Ge electrodes are deposited on the GaAs face and Au electrodes on the TiOface by vacuum evaporation; the soldering is performed with molten indium on the Au-Ge/GaAs face and with indium wire on the Au/TiOface, in air, at 200...250°C. At the end, the assembly of the sensitive structure is sealed, on a cup-shaped base support TO39, with glass cover.</p> |
申请公布号 |
RO123630(B1) |
申请公布日期 |
2015.02.27 |
申请号 |
RO20060000736 |
申请日期 |
2006.09.22 |
申请人 |
INSTITUTUL NA&Tcedil,IONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR |
发明人 |
CERNEA MARIN;GHI&Tcedil,&Abreve, RODICA;NEGRIL&Abreve, CONSTANTIN C&Abreve,T&Abreve,LIN |
分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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