发明名称 Thin film transistor array substrate, manufacturing method thereof, and display device
摘要 A thin film transistor (TFT) array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method comprises: forming a first passivation layer (8) on a substrate (1), and forming a board wiring PAD-region via hole (11) in the first passivation layer (8) above the board wiring PAD region (11) through a first patterning process; forming a second passivation layer (16) on the substrate (1) formed with the board wiring PAD-region via hole (11), and forming a pixel-region via hole (15) in the first passivation layer (8) and the second passivation layer (16) above the display electrode (7) through a second patterning process in such a way that the pixel-region via hole (15) has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate (1) formed with the pixel-region via hole (15) to form a second display electrode.
申请公布号 US9530807(B2) 申请公布日期 2016.12.27
申请号 US201213993666 申请日期 2012.12.10
申请人 Beijing BOE Optoelectronics Technology Co., Ltd. 发明人 Li Tiansheng;Zhang Wenyu;Xie Zhenyu
分类号 H01L27/12;H01L29/786;H01L33/36;G02F1/1343;G02F1/1337 主分类号 H01L27/12
代理机构 代理人
主权项 1. A manufacturing method of a thin film transistor array substrate, comprising: forming a first passivation layer on a substrate formed with a gate scan line, a thin film transistor, a data line, a first display electrode and a board wiring PAD region, and forming a board wiring PAD-region via hole in the first passivation layer above the board wiring PAD region through a first patterning process; forming a second passivation layer on the substrate formed with the board wiring PAD-region via hole, and forming a pixel-region via hole in the first passivation layer and the second passivation layer above the first display electrode through a second patterning process in such a way that the pixel-region via hole has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate formed with the pixel-region via hole to form a second display electrode, wherein the pixel-region via hole is formed at a region other than the thin film transistor, and wherein, for cross sections of the pixel-region via hole taken along a direction parallel to the substrate, an area of cross sections away from the substrate is smaller than an area of cross sections closer to the substrate.
地址 Beijing CN