| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method where a cleaning gas comprising propene hexafluoride is introduced into the chamber of a film deposition system, and sediments are removed in a plasma atmosphere, by which the outflow of the gas comprising propene hexafluoride from the chamber of the film deposition system to the outside is prevented, and further, damage removal treatment in the poststage of the film deposition system is made needless. SOLUTION: Only oxygen is introduced into a chamber 1 from an O<SB>2</SB>introduction tube 4, so as to generate plasma. Thereafter, propene hexafluoride is introduced from a C<SB>3</SB>F<SB>6</SB>introduction tube 3, so as to perform cleaning. Even after the introduction of the propene hexafluoride is stopped, oxygen is introduced, so as to generate plasma. COPYRIGHT: (C)2008,JPO&INPIT
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