| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which the light emitted from a light-emitting layer can be taken out while being reflected with high efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor light-emitting device includes a laminate having a first conductor layer, a second conductor layer and a light-emitting layer provided between the first and second conductor layers, a first electrode 7 provided on the first major surface of the laminate and connected with the first conductor layer, and a second electrode 4 provided on the first major surface of the laminate and connected with the second conductor layer wherein the first electrode has a first region provided on the first conductor layer and including a first metal film, and a second region provided on the first conductor layer and having a reflectivity higher than that of the first metal film for the light emitted from the light-emitting layer and a contact resistance for the first conductor layer higher than that of the first metal film. <P>COPYRIGHT: (C)2009,JPO&INPIT |
