| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a low-cost semiconductor device.SOLUTION: A method of manufacturing a semiconductor device according to an embodiment includes the following steps of: selectively forming a plurality of electrode layers on a first surface of a semiconductor substrate having the first surface and a second surface; and dry-etching the first surface of the semiconductor substrate exposed between the plurality of electrode layers by using the plurality of electrode layers as a mask, and forming a gap that penetrates from the first surface to the second surface of the semiconductor substrate, and thereby, dividing the semiconductor substrate.SELECTED DRAWING: Figure 1 |
