| 摘要 |
<p>PURPOSE:To perform high-precision patterning with sufficient contrast by dry etching by using an X-ray absorbing layer made of gold containing a specific amount of silicon on an X-ray transmissive substrate. CONSTITUTION:The X-ray absorbing layer 2 is formed on the X-ray transmissive substrate 1 by using gold which contains 1-40wt% silicon. The film thickness of the X-ray absorbing layer 2 is about 0.2-2mum based upon the (r) value of resist and the wavelength of X rays according to the coefficient of X-ray absorption, and dry etching is carried out to form a mask for X-ray exposure which has a fine pattern. The obtained mask for exposure is arranged at an accurate position so that the section of the absorbing layer 2 is vertical. Consequently, the patterning is carried out with high precision and the mask original plate having the X-ray absorbing layer with sufficient contrast is obtained.</p> |
