| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a batch erasable nonvolatile memory capable of storing data written with high frequency. <P>SOLUTION: The memory includes an address information storing means for storing address information about blank areas in a cluster consisting of a plurality of sectors; a data write means for executing, when receiving a write request of data, processing of writing the data into at least one of the blank areas referring to the address information about the blank areas; and an address information update means for updating the address information associated with the at least one of the blank areas after the data write means completes execution of writing the data. When the sector includes a plurality of data blocks, the data write means refers to a used state flag which is stored in a header area of the sector for indicating a used state of the data block, and executes the process of writing the data into a blank area of the data block. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
