| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which leads the relatively largeest static electricity pulses as possible to off transistors and prevents the pulses from being propagated to an internal circuit element, or changes fast and large static electricity pulses to slow and small signals for propagation to prevent ESD breakdown in the internal circuit element. <P>SOLUTION: In the semiconductor device having an ESD protective element between an external connection terminal and an internal circuit region, wiring from the external connection terminal to the ESD protective element is formed by metal wiring of a plurality of layers so that the value of resistance in the wiring from the external connection terminal to the ESD protective element becomes smaller than that in wiring from the ESD protective element to an internal element. The wiring from the ESD protective element to the internal element is formed by metal wiring of layers the number of which is equal to or smaller than the number of wires of the plurality of layers used for the wiring from the external connection terminal to the ESD protective element. <P>COPYRIGHT: (C)2009,JPO&INPIT |
