| 摘要 |
PROBLEM TO BE SOLVED: To reduce a chip area while stopping through-current.SOLUTION: A semiconductor storage comprises: a first memory string 18 including a first selection transistor ST2b, a second selection transistor ST2a and a first memory cell transistor MT which are series connected sequentially; and a bit line BL electrically connected to one end of the first memory cell transistor; a source line SL electrically connected to one end of the first selection transistor; and a well region 20 connected to one end of the first selection transistor and further connected to the source line and a common node. The source line and the well region are applied a first voltage VDD, a gate of the first selection transistor is applied the first voltage, and a gate of the second selection transistor is applied a second voltage VSS smaller than the first voltage.SELECTED DRAWING: Figure 2 |
