| 摘要 |
PROBLEM TO BE SOLVED: To suppress CD loading in a plasma etching method and a plasma etching device.SOLUTION: A plasma etching method is the plasma etching method for etching a lower layer film with plasma by using a photoresist as a mask, and includes a first step and a second step. The first step is a step of etching a lower layer film with plasma by using a processed photoresist and scum as a mask under a first treatment condition that the selection ratio of the photoresist to the lower layer film is equal to a first selection ratio without any step of removing scum remaining in a photoresist processed in a predetermined pattern through exposure and development. The second step is a step of further etching the lower layer film with plasma by using a photoresist as a mask while the treatment condition is switched, in the course of the etching of the lower layer film, from the first treatment condition to a second treatment condition under which the selection ratio of the photoresist to the lower layer film is set to a second selection ratio lower than the first selection ratio.SELECTED DRAWING: Figure 11 |
