| 摘要 |
Embodiments of the invention generally provide a method for forming an ultra shallow junction in a semiconductor device. In one embodiment, the method includes providing a silicon containing layer disposed on a substrate, implanting carbon and an elemental dopant into the silicon containing layer on the substrate, and annealing the implanted silicon containing layer. In another embodiment, the method includes providing a silicon containing layer on a substrate, implanting carbon and an elemental dopant into the silicon containing layer to form source and drain regions on the substrate, annealing the silicon containing layer, and forming an ultra shallow junction between the source and drain regions on the substrate having a junction depth less than 20 nm.
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