发明名称 SINGLE CRYSTAL GROWING APPARATUS
摘要 An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.
申请公布号 US2016298260(A1) 申请公布日期 2016.10.13
申请号 US201415100597 申请日期 2014.11.19
申请人 LG SILTRON INCORPORATED 发明人 BANG In Sik;KIM Cheol Hwan
分类号 C30B17/00;C30B29/20;C30B15/20 主分类号 C30B17/00
代理机构 代理人
主权项 1. A single crystal growing apparatus comprising: a chamber; a crucible provided in the chamber and accommodating a molten liquid as a raw material for single crystal growth; a crucible screen disposed on a top of the crucible; and a conveying unit for raising or lowering the crucible screen.
地址 Gumi-si, Gyeongsangbuk-do KR