发明名称 |
SINGLE CRYSTAL GROWING APPARATUS |
摘要 |
An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals. |
申请公布号 |
US2016298260(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201415100597 |
申请日期 |
2014.11.19 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
BANG In Sik;KIM Cheol Hwan |
分类号 |
C30B17/00;C30B29/20;C30B15/20 |
主分类号 |
C30B17/00 |
代理机构 |
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代理人 |
|
主权项 |
1. A single crystal growing apparatus comprising:
a chamber; a crucible provided in the chamber and accommodating a molten liquid as a raw material for single crystal growth; a crucible screen disposed on a top of the crucible; and a conveying unit for raising or lowering the crucible screen. |
地址 |
Gumi-si, Gyeongsangbuk-do KR |