| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method by which a film can be efficiently grown on an insulator, especially an insulator with low heat resistance in a short time by plasma, and a surface quality modification process can be performed thereon; and a device therefor.SOLUTION: A method for surface modification and film deposition comprises the steps of: introducing a material gas serving as a plasma generation source into an evacuated reaction chamber 1; and applying a minus voltage to a cathode electrode 3 set in the reaction chamber 1 to decompose the material gas, produce plasma, and cause a reaction on a target base material 2 set in the reaction chamber 1, whereby plasma ions and radicals produced by an electric field resulting from the voltage application are applied to or deposited on the target base material 2. In the method, the cathode electrode 3 has at least a part composed of an electrode 4 allowing the material gas to pass therethrough. The cathode electrode 3 is disposed so as to avoid directly touching a surface which needs to be subjected to a surface treatment such as a quality modification or a film deposition on the target base material 2; and a pulse-like DC voltage of -2 to -20 kV is applied to the cathode electrode 3.SELECTED DRAWING: Figure 1 |
