Beam pen lithography

摘要

The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source.

主权项

1. A tip array comprising:
a tip substrate layer comprising a first surface and an oppositely disposed second surface; a plurality of tips fixed to the first surface, the tips each comprising a tip end disposed opposite the first surface, the tip substrate layer and the plurality of tips being formed from an at least translucent and deformable material, the tip substrate layer and the plurality of tips being formed from the same material, the tips having a radius of curvature of less than 1 μm, wherein the tips are arranged in a pre-determined pattern extending in at least two dimensions; a blocking layer coated on the plurality of tips and the first surface; and a plurality of apertures defined in the blocking layer exposing the tip ends of the plurality of tips, wherein the tip array is configured to generate a near field optical effect when brought in proximity with a substrate, and deformation of the tips when in contact with the substrate provides a change in the size of the near-field optical effect.