Memory device with reduced neighbor memory cell disturbance

摘要

In one embodiment, an apparatus, such as a memory device, is disclosed. The apparatus includes a memory cell, digit line driver, access line driver, clamping element, and control circuit. The memory cell and clamping element can be both coupled to a digit line. The control circuit can be configured to cause the clamping element to clamp the voltage of the digit line for a period of time while the digit line driver is caused to bias the digit line at a voltage level sufficient to enable selection of the memory cell. In addition, the control circuit can be configured to cause the access line driver to bias an access line coupled to memory cell when the voltage of the digit line is at the voltage level sufficient to enable selection of the memory cell.

主权项

1. An apparatus comprising:
a memory cell operatively coupled to a first digit line and a first access line; a digit line driver configured to bias the first digit line; a first access line driver configured to bias the first access line; a first clamping element operatively coupled to the first digit line and a second access line, the first clamping element configured to clamp a voltage of the first digit line; a second clamping element operatively coupled to a second digit line and the second access line, the second clamping element configured to clamp a voltage of the second digit line, the second digit line adjacent to the first digit line; and a control circuit configured to:
cause the first clamping element to clamp the voltage of the first digit line for a period while the digit line driver is caused to bias the first digit line at a voltage level sufficient to enable selection of the memory cell,cause the second clamping element to clamp the voltage of the second digit line for the period, andcause the first access line driver to bias the first access line when the voltage of the first digit line is at the voltage level sufficient to enable selection of the memory cell, wherein the first and second clamping elements each comprise the same components as the memory cell.