OPTOELECTRONIC COMPONENT HAVING A LAYER STACK

摘要

Optoelectronic component (20) having a layer stack (10), comprising at least the following: a layer sequence constituting a semiconductor light emitting diode (5) and comprising at least a first light emitting diode layer (2), a second light emitting diode layer (4) and an optically active zone (3) between the first (2) and the second light emitting diode layer (4), wherein the two light emitting diode layers (2, 4) are in each case formed from a III-V semiconductor material containing in each case at least one of the elements aluminium, gallium and indium and in each case at least one of the elements nitrogen, phosphorus and arsenic, and wherein the first light emitting diode layer (2) is an n-doped layer and the second light emitting diode layer (4) is a p-doped layer, a silver-containing metallic layer (9) and an interlayer (8) composed of a transparent conductive oxide, which is arranged between the semiconductor light emitting diode (15) and the metallic layer (9), characterized in that the metallic layer (9) and the interlayer (8) are arranged on that side of the semiconductor light emitting diode (15) which the p-doped second light emitting diode layer (4) faces, and in that at least one highly doped first semiconductor layer (7), the dopant concentration of which is greater than the dopant concentration of the second light emitting diode layer (4), is arranged between the second light emitting diode layer (4) and the interlayer (8).