| 摘要 |
Provided is an apparatus for growing silicone single crystal ingot, which includes: a chamber; a crucible provided in the chamber and melting polycrystalline silicone after loading the same; and a plurality of heater parts separated from an outer lateral side of the crucible and surrounding an outer circumferential surface of the crucible. According to the present invention, the apparatus is capable of selectively controlling a temperature of the heater parts. |
