发明名称 |
HIGH-TEMPERATURE NANOCOMPOSITE EMITTING FILM, METHOD FOR FABRICATING THE SAME AND ITS APPLICATION |
摘要 |
An inventive thin-film radiative structure is provided that includes a thin nanocomposite radiative film deposited on a substrate, the thin-film including a mix of finely dispersed phases formed by elements Mo, Si, C, O in the following atomic percentage terms: Mo from 10 to 20%, Si from 15 to 30%, C from 15 to 60%, O from 0 to 20%, and one or a combination of elements Ti, Zr, Hf, Cr, Si, Al, and B in percentage terms of 0-30%. The thin-film radiative structure has an emissivity of more than 0.7 for wavelengths 2-20 μm at temperatures above 500° C., and a sheet resistance of between 10 and 150 Ohm/sq. The radiative film may be used as a thermoresistive element in thin-film infra-red thermal emitters and infra-red heaters, and in nondispersive infrared sensors (NDIR) and photo-acoustic gas sensors, and as the radiative element in IR signaling devices. |
申请公布号 |
US2016249412(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201414783071 |
申请日期 |
2014.04.08 |
申请人 |
Romanov Igor;NOVAIR, INC. |
发明人 |
Romanov Igor;Kropachev Alexandr;Skotheim Terje |
分类号 |
H05B3/14;H05B3/22 |
主分类号 |
H05B3/14 |
代理机构 |
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代理人 |
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主权项 |
1. A thin-film radiative structure, comprising:
a substrate; and a nanocomposite radiative film deposited on and supported by the substrate, the nanocomposite radiative film including:
a mix of dispersed phases formed by elements selected from the group consisting of: Mo, Si, C, and O that exist in the following percentage terms: Mo from 10 to 20 atomic %, Si from 15 to 30 atomic %, C from 15 to 60 atomic %, O from 0 to 20 atomic %, andat least one element selected from the group consisting of: Ti, Zr, Hf, Cr, Si, Al, and B in percentage terms of 0 to 30 atomic %. |
地址 |
Minsk BY |