| 发明名称 |
ETCHING LIQUID FOR OXIDE CONTAINING ZINC AND TIN, AND ETCHING METHOD |
| 摘要 |
The present invention provides an etching liquid which has a suitable etching rate for etching of an oxide containing zinc and tin and is suppressed in change of the etching rate due to dissolution of the oxide, while being free from the generation of a precipitate. The corrosiveness of this etching liquid to wiring materials is low enough to be ignored, and this etching liquid has excellent linearity of a pattern shape. The present invention uses an etching liquid which contains (A) one or more substances selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, methanesulfonic acid, perchloric acid and salts of these acids, and (B) oxalic acid or a salt thereof and water, and which has a pH of from −1 to 1. |
| 申请公布号 |
US2016329217(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201415107672 |
申请日期 |
2014.12.16 |
| 申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
SHIGETA Mari;YUBE Kunio |
| 分类号 |
H01L21/465;C09K13/00;C09K13/06;H01L27/12 |
主分类号 |
H01L21/465 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching liquid for etching an oxide containing at least zinc and tin, the etching liquid comprising:
(A) one or more selected from the group consisting of sulfuric acid, nitric acid, methanesulfonic acid, hydrochloric acid, perchloric acid or salts thereof; and (B) oxalic acid or a salt thereof and water, wherein the pH value is −1 to 1. |
| 地址 |
Tokyo JP |
