发明名称 SEMICONDUCTOR DEVICE DEGRADATION DETECTING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To detect degradation in a solder joint of a semiconductor power module efficiently and accurately. <P>SOLUTION: Extremely short-time short-circuit pulses 15a, 15b which do not exceed a short-circuit tolerance are input from a control circuit 10 to upper and lower arm elements (IGBT) 3a, 3b. A current value passing through, for example, the element 3a at that time is compared to a standard value 7a. It is decided that when the current value is a value other than the standard value 7a, degradation has been detected at the solder joint, thereby allowing degradation to be detected effectively and accurately. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009019953(A) 申请公布日期 2009.01.29
申请号 JP20070181868 申请日期 2007.07.11
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD 发明人 TAKUBO HIROSHI
分类号 G01R31/26;G05F1/10;H02M7/48 主分类号 G01R31/26
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