| 摘要 |
A method for manufacturing a semiconductor device is provided to control generation of voids between semiconductor devices and generation of a void curled between a substrate and the semiconductor device by controlling heating temperature of an adhesive layer. A first semiconductor device(5) having an electrode pad is bonded on a substrate(2) having a connecting unit(4). The connecting unit of the substrate and the electrode pad of the first semiconductor device are connected by a first bonding wire(7). An adhesive layer(9) is formed at the back of the second semiconductor device having an electrode pad. A remaining volatile part of the adhesive layer is less than 0.5 %. The second semiconductor device is disposed on the adhesive layer to arrange on the first semiconductor layer. The adhesive layer is heated over 120°C and less than 150°C to soften or melt at least part of the adhesive layer and to adhere closely to the first semiconductor device. The adhesive layer adhered closely to the first semiconductor device is heat-cured to adhere the second semiconductor device to the first semiconductor device. The connecting unit of the substrate and the electrode pad of the second semiconductor device are connected by a second bonding wire(11). |
