| 发明名称 |
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure |
| 摘要 |
A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a first p-type Group III-nitride layer, and a second side face of the multi-heterojunction fin structure is covered by a second p-type Group III-nitride layer. |
| 申请公布号 |
US2016247905(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201615145855 |
申请日期 |
2016.05.04 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Ostermaier Clemens;Prechtl Gerhard;Häberlen Oliver |
| 分类号 |
H01L29/778;H01L29/40;H01L29/207;H01L29/10;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Group III-nitride-based enhancement mode transistor, comprising a multi-heterojunction fin structure, wherein a first side face of the multi-heterojunction fin structure is covered by a first p-type Group III-nitride layer and a second side face of the multi-heterojunction fin structure is covered by a second p-type Group III-nitride layer. |
| 地址 |
Villach AT |
