发明名称 |
IGZO devices with reduced threshhold voltage shift and methods for forming the same |
摘要 |
Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. A gate dielectric layer is formed above the gate electrode. An interface layer is formed above the gate dielectric material. An IGZO channel layer is formed above the interface layer. A source electrode and a drain electrode are formed above the IGZO channel layer. The interface layer includes a material different than that of the gate dielectric layer and the IGZO channel layer. |
申请公布号 |
US9082793(B1) |
申请公布日期 |
2015.07.14 |
申请号 |
US201314135534 |
申请日期 |
2013.12.19 |
申请人 |
Intermolecular, Inc. |
发明人 |
Ahmed Khaled |
分类号 |
H01L29/12;H01L29/66;H01L29/786 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
providing a substrate; forming a gate electrode above the substrate; forming a gate dielectric layer above the gate electrode; forming an interface layer above the gate dielectric material; forming an IGZO channel layer above the interface layer; forming a source electrode above the IGZO channel layer; forming a drain electrode above the IGZO channel layer; and wherein the interface layer comprises a material different than that of the gate dielectric layer and the IGZO channel layer, the material comprising sulfur-doped IGZO. |
地址 |
San Jose CA US |