| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of easily planarizing a semiconductor device having such a structure that a plurality of layers made of a different material and formed with a different pattern are stacked, regardless of the material and without performing a polishing process by CMP method or a planarization process by formation of an SOG film. SOLUTION: In the semiconductor device made by stacking a plurality of different layers, an opening is formed in an insulation film and an interconnection (electrode) or a semiconductor layer is formed inside the opening. Due to this structure, the surface of the semiconductor device can be planarized without performing a polishing process by CMP method or a planarization process by formation of an SOG film on an insulation film and on another insulation film formed on the interconnection (electrode) or the semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT |
