GEOMETRY DEPENDENT VOLTAGE BIASES FOR ASYMMETRIC RESISTIVE MEMORIES

摘要

In one example, a system includes a multi-plane memory array with shared crossbars and memory elements accessed through the shared crossbars and support circuitry. The support circuitry includes a bias multiplexer to determine an orientation of a target memory element in the multi-plane memory array and output voltage biases with a polarity based on the orientation of the target memory element. Methods for generating and applying geometry dependent voltage biases are also provided.

主权项

1. A system comprising:
a multi-plane memory array with shared crossbars and memory elements accessed through the shared crossbars; support circuitry comprising a bias multiplexer to determine an orientation of a target memory element in the multi-plane memory array and output voltage biases with a polarity based on the orientation of the target memory element.