| 发明名称 |
MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEMORY AND MAGNETIC RECORDING METHOD |
| 摘要 |
A magnetoresistive device includes a magnetic free layer having first and second surfaces, the magnetic free layer being comprised of a ferromagnetic material having a perpendicular magnetic anisotropy, a spin current generation layer contacting the first surface of the magnetic free layer, a tunnel barrier layer having one surface contacting the second surface of the magnetic free layer, a reference layer contacting another surface of the tunnel barrier layer, and a leakage field generation layer including first and second leakage field generation layers each of which is comprised of a ferromagnetic material and generates a leakage field, an in-plane component of the leakage field at an part of the magnetic free layer is formed generating a domain wall having an in-plane magnetization component in the magnetic free layer. |
| 申请公布号 |
US2016247550(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201615144715 |
申请日期 |
2016.05.02 |
| 申请人 |
NEC CORPORATION ;TOHOKU UNIVERSITY |
发明人 |
FUKAMI Shunsuke;YAMANOUCHI Michihiko;OHNO Hideo |
| 分类号 |
G11C11/16;H01L43/10;H01L27/22;H01L23/528;H01L43/08;H01L43/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive device, comprising:
a magnetic free layer having first and second surfaces, the magnetic free layer being comprised of a ferromagnetic material having a perpendicular magnetic anisotropy; a spin current generation layer contacting the first surface of the magnetic free layer; a tunnel barrier layer having one surface contacting the second surface of the magnetic free layer; a reference layer contacting another surface of the tunnel barrier layer; and a leakage field generation layer including first and second leakage field generation layers each of which is comprised of a ferromagnetic material and generates a leakage field, an in-plane component of the leakage field at an part of the magnetic free layer is formed generating a domain wall having an in-plane magnetization component in the magnetic free layer. |
| 地址 |
Tokyo JP |
