| 摘要 |
An IGZO sintered body that is an oxide sintered body that comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, the IGZO sintered body being characterized by having a flexural strength of 50 MPa or higher and by having a bulk resistance of 100 mΩcm or lower. The present invention addresses the problem of providing a sputtering target that can reduce target cracking and particle generation during film formation by DC sputtering and that can be used to form a favorable thin film. |
