| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having IGBT region and a diode region formed in the same semiconductor substrate, which enables the achievement of both of the suppression of the variation in trench gate threshold voltage and the improvement of the reverse recovery characteristic of the diode region.SOLUTION: A semiconductor device comprises a semiconductor substrate having an IGBT region and a diode region formed therein. The IGBT region includes: a collector layer; a first drift layer; a first body layer; an emitter layer; and trench gates extending from the front face side of the semiconductor substrate through the first body layer to the first drift layer. The diode region includes a cathode layer, a second drift layer and a second body layer. In parts of first and second drift layers ranging from the depth of lower ends of the trench gates to the surface of the first and second drift layers, a lifetime-control region including peaks of crystal defect densities is formed. Further, a silicon nitride film layer is provided over the trench gates on the front face side of the semiconductor substrate. |
