发明名称 AN IMAGER PHOTO DIODE CAPACITOR STRUCTURE WITH REDUCED PROCESS VARIATION SENSITIVITY
摘要 <p>A pixel cell having two capacitors connected in series where each capacitor has a capacitance approximating that of the periphery capacitors and such that the effective capacitance of the series capacitors is smaller than that of each of the periphery capacitors. The series-connected capacitors are coupled to the floating diffusion (FD) region for receiving "surplus" charge from the FD region during saturation conditions.</p>
申请公布号 WO2005017982(A1) 申请公布日期 2005.02.24
申请号 WO2004US24598 申请日期 2004.07.30
申请人 MICRON TECHNOLOGY, INC.;MCCLURE, BRENT, A. 发明人 MCCLURE, BRENT, A.
分类号 H01L27/146;H01L27/148;H04N3/15;(IPC1-7):H01L21/00 主分类号 H01L27/146
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