发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, RETICLE, AND SEMICONDUCTOR MANUFACTURING FACILITY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which enables a check to see easily if an ion is injected in a semiconductor wafer or not. <P>SOLUTION: The manufacturing method has an ion injection process which includes a step of forming a resist pattern on the semiconductor wafer 20, and a step of forming an ion injection patterns 22 for the semiconductor device on the semiconductor wafer 20 by injecting the ion into the semiconductor wafer 20 using the resist pattern as a mask. The resist pattern has the ion injection patterns 22 for the semiconductor device, and ion injection confirming patterns which can be recognized visually or through a metallic microscope, at a position where the resist pattern overlaps the edge or the scribe line of the semiconductor wafer 20. The ion injection confirming patterns 24a, 24b are formed on the edge or the scribe line of the semiconductor wafer 20 at the step of forming the ion injection pattern 22. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005209762(A) 申请公布日期 2005.08.04
申请号 JP20040012688 申请日期 2004.01.21
申请人 SEIKO EPSON CORP 发明人 HAMAGUCHI TOSHIAKI
分类号 G03F1/00;G03F1/70;H01L21/027;H01L21/265;H01L21/266;(IPC1-7):H01L21/265;G03F1/08 主分类号 G03F1/00
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