发明名称 |
REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent swelling and infiltration of a reaction vessel due to the flux within the reaction vessel even when a single crystal is grown at high temperature, in growing the single crystal by using the flux containing sodium metal etc. <P>SOLUTION: In the reaction vessel 25 used for growing the single crystal by using flux containing at least either of alkali metal and alkaline earth metal, there is provided the reaction vessel 25 composed of ceramics containing either or both of titanium nitride and zirconium nitride as a principal component. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006265069(A) |
申请公布日期 |
2006.10.05 |
申请号 |
JP20050088563 |
申请日期 |
2005.03.25 |
申请人 |
NGK INSULATORS LTD;MORI YUSUKE |
发明人 |
IWAI MAKOTO;KOBAYASHI YOSHIMASA;ICHIMURA MIKIYA;IMAI KATSUHIRO;KAWAHARA MINORU;KAWAMURA SHIRO;SASAKI TAKATOMO |
分类号 |
C04B35/58;C30B29/38 |
主分类号 |
C04B35/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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