发明名称 REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To prevent swelling and infiltration of a reaction vessel due to the flux within the reaction vessel even when a single crystal is grown at high temperature, in growing the single crystal by using the flux containing sodium metal etc. <P>SOLUTION: In the reaction vessel 25 used for growing the single crystal by using flux containing at least either of alkali metal and alkaline earth metal, there is provided the reaction vessel 25 composed of ceramics containing either or both of titanium nitride and zirconium nitride as a principal component. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006265069(A) 申请公布日期 2006.10.05
申请号 JP20050088563 申请日期 2005.03.25
申请人 NGK INSULATORS LTD;MORI YUSUKE 发明人 IWAI MAKOTO;KOBAYASHI YOSHIMASA;ICHIMURA MIKIYA;IMAI KATSUHIRO;KAWAHARA MINORU;KAWAMURA SHIRO;SASAKI TAKATOMO
分类号 C04B35/58;C30B29/38 主分类号 C04B35/58
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