GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME
摘要
<p>Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.</p>
申请公布号
WO2009051650(A1)
申请公布日期
2009.04.23
申请号
WO2008US11578
申请日期
2008.10.08
申请人
CORNING INCORPORATED;BHAT, RAJARAM;GADKAREE, KISHOR P;NAPIERALA, JEROME;PINCKNEY, LINDA R;ZAH, CHUNG-EN
发明人
BHAT, RAJARAM;GADKAREE, KISHOR P;NAPIERALA, JEROME;PINCKNEY, LINDA R;ZAH, CHUNG-EN
