| 摘要 |
PROBLEM TO BE SOLVED: To provide a power module and a method of manufacturing the same capable of achieving miniaturization, increase in current capacity, and reduction in cost by a lead frame structure, and of suppressing variation of welding without damaging a semiconductor device to improve a yield.SOLUTION: A power module 20 comprises: a first metal circuit pattern 3; a semiconductor device 1 disposed on the first metal circuit pattern 3; a lead frame 15 electrically connected with the semiconductor device 1; and a stress buffer layer 14 disposed on an upper surface of the semiconductor device 1, and capable of absorbing a thermal expansion coefficient difference between the semiconductor device 1 and the lead frame 15. The lead frame 15 is connected with the semiconductor device 1 via the stress buffer layer 14, and a thermal expansion coefficient of the stress buffer layer 14 is equal to or less than that of the lead frame 15, and a cross-sectional shape of the stress buffer layer 14 is in an L-shape. |
