| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which sidewall insulating films, covering side surfaces of a gate electrode of a first element and an electrode portion of a second element, can be made different in widths, while increase in manufacturing man-hours is suppressed. SOLUTION: The manufacturing method of the semiconductor device 100 includes the processes of forming a gate electrode 28 on a region B of a silicon substrate 11; forming a protective film covering a region A of the silicon substrate 11 and an insulating film 42a, covering a side surface of the gate electrode 28, by forming the spacer insulating film 42 in the region A of the silicon substrate 11 so that the side surface of the gate electrode 28 and the region A are covered; forming an emitter electrode 25 on the region A; forming a silicon oxide film 49 so as to cover the gate electrode 28 and emitter electrode 25; and forming an insulating film 30a, covering the insulating film 42a and a sidewall insulating film 26, covering the side surface of the emitter electrode 25, by etching the spacer insulating film 42 and silicon oxide film 49. COPYRIGHT: (C)2009,JPO&INPIT
|
