HIGH QUALITY SILICON SINGLE CRYSTALLINE INGOT PRODUCING METHOD, APPARATUS FOR GROWING THE SAME, INGOT, AND WAFER

摘要

A high quality silicon single crystalline ingot manufacturing method, a growing apparatus, and ingot and wafer obtained therefrom are provided to acquire silicon ingot having a variety of oxygen concentration by controlling a temperature distribution of silicon melt using an unbalanced magnetic field. An unbalanced magnetic field is applied to a silicon melt of a crucible(20). The unbalanced magnetic field is formed by controlling differently an upper magnetic field and a lower magnetic field. The upper magnetic field is formed at an upper portion of the crucible. The lower magnetic field is formed at lower and round portions of the crucible.