| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a cavity structure of a semiconductor device by which production efficiency is improved and cost is reduced. <P>SOLUTION: This method for forming the cavity structure of the semiconductor device is useful, especially for packaging an image sensor, and a spacer layer is formed at the upper part of a substrate. The spacer layer is patterned by using a photolithography technique, and formed from a photosensitive material forming a cavity wall 250 surrounding a die on a wafer 200. A packaging layer 260 which is an almost transparent layer is directly arranged on the top of the cavity wall 250. In another practical example, the cavity wall 250 is hardened, adhesive agent is applied to the surface of the cavity wall 250, and the packaging layer 260 is mounted on the adhesive agent. Then the wafer 200 is cut finely, and each die is packaged to be used. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
