Optical storage medium comprising a mask layer with a super resolution near field structure

摘要

The optical storage medium according to the invention uses a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, for example for providing a reflectivity factor above 0,9, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor as the mask layer can be used, wherein the semiconductor material is for example InSb and the dopant is included already in the semiconductor sputtering target.