| 摘要 |
A semiconductor memory device capable of checking error of serially inputted/outputted data efficiently and a driving method thereof are provided to comprise a minimum CRC(Cyclic Redundancy Code) code generation circuit in correspondence to a number of banks comprised in the memory device, by generating a CRC code efficiently. A semiconductor memory device comprises a first bank(B0) and a second bank(B1). A first data input/output pad(DQ0) is arranged in one region of the first bank, and is used for accessing data of the first bank. A second data input/output pad(DQ1) is arranged in one region of the second bank, and is used for accessing data of the second bank. A first CRC(Cyclic Redundancy Code) generation circuit(300) generates a first CRC code using numerous data outputted from the first bank and then outputs the first CRC code through the first data input/output pad. A second CRC code generation circuit(400) generates a second CRC code using numerous data outputted from the second bank and then outputs the second CRC code through the second data input/output pad.
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