发明名称 |
TERMINATION AND CONTACT STRUCTURES FOR A HIGH VOLTAGE GAN-BASED HETEROJUNCTION TRANSISTOR |
摘要 |
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer. |
申请公布号 |
WO2008116040(A1) |
申请公布日期 |
2008.09.25 |
申请号 |
WO2008US57602 |
申请日期 |
2008.03.20 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION;MURPHY, MICHAEL;POPHRISTIC, MILAN |
发明人 |
MURPHY, MICHAEL;POPHRISTIC, MILAN |
分类号 |
H01L29/205 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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