| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition analyzing method, capable of analyzing the composition of a sample of a semiconductor element or the like, having an arbitrary shape with high spatial resolving power and high precision. SOLUTION: In the composition analyzing method, the coefficientαof correction is calculated from the ratio of the average value of actually measured attenuation distances, due to measurements of (n) times (n is an integer) in the microregion of a standard sample known in theoretical attenuation distance and the theoretical attenuation distance of a standard sample, determined on the basis of dynamic diffraction theory; a corrected attenuation distance is calculated by multiplying the actually measured attenuation distances due to the measurements in the microregion of a sample to be evaluated by the coefficientαof correction and, from a calibration curve, showing the relation between the composition determined on the basis of the dynamic diffraction theory and the attenuation distance; and a composition, corresponding to the corrected attenuation distance, is found out to calculate the composition of the microregion of the sample to be evaluated. COPYRIGHT: (C)2005,JPO&NCIPI
|
