| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of a fast recovery diode, where gold working as a lifetime killer is diffused for shortening the switching time, and the switching time is shortened by shortening the lifetime of minority carriers, that when the switching time is shortened by this technique, the reverse leakage current increases due to the deep level (Ec-0.51 eV) of gold.SOLUTION: By combining a gold diffusion layer and a crystal defect layer, a deep level (Ec-0.51 eV) of gold and a shallow impurity level (Ec-0.31 eV) of crystal defect are formed in silicon. When controlling the lifetime of carriers by combining the two levels, a fast switching diode is obtained while suppressing the leakage current.SELECTED DRAWING: Figure 3 |
