MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A memory device is provided. The memory device includes a substrate, a plurality of semiconductor strip structures, a first doped region, a plurality of second doped regions, a plurality of first contacts, and a plurality of second contacts. Each of the semiconductor strip structures extends along a first direction. The first doped region includes a plurality of first portions and a second portion. Each of the first portions is located on a lower part of the corresponding semiconductor strip structure. The second portion is located on a surface of the substrate, and the first portions are connected to the second portion. Each of the second doped regions is located on an upper part of the corresponding semiconductor strip structure. Each of the first contacts is electrically connected to the second portion of the first doped region. Each of the second contacts is electrically connected to the corresponding second doped region.

主权项

1. A memory device, comprising:
a substrate comprising a plurality of first blocks and a plurality of second blocks, wherein the first blocks and the second blocks are alternated to each other, each of the first blocks comprises two first regions and a second region, and the second region is disposed between the two first regions; a plurality of semiconductor strip structures disposed on the substrate, wherein each of the semiconductor strip structures extends in a first direction; a first doped region comprising a plurality of first portions and a second portion, wherein each of the first portions is disposed at a lower part of the corresponding semiconductor strip structure, the second portion is disposed on a surface of the substrate, and the first portions are connected with the second portion; a plurality of second doped regions, wherein each of the second doped regions is disposed at an upper part of the corresponding semiconductor strip structure; a plurality of word lines disposed on the substrate in each of the first regions, wherein each of the word lines extends in a second direction and covers a portion of a sidewall and a portion of a top of each of the semiconductor strip structures, and the first direction and the second direction are different from each other; a charge storage layer disposed between the semiconductor strip structures and the word lines; a plurality of first contacts disposed in the second blocks and the second regions and arranged in the first direction, wherein each of the first contacts is electrically connected with the second portion of the first doped region; a plurality of second contacts disposed at least in the second regions, wherein each of the second contacts is electrically connected with the corresponding second doped region; a first conductive line disposed on the substrate, wherein the first conductive line extends in the first direction and is electrically connected with the first contacts; and a plurality of second conductive lines disposed on the substrate, wherein each of the second conductive lines extends in the first direction and is electrically connected with the second contacts on the corresponding semiconductor strip structure.