发明名称 HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide heat treatment apparatus, heat treatment method and program capable of reducing inter-surface temperature difference of an object to be treated.SOLUTION: A heat treatment apparatus 1 includes heaters 11-15 for heating a reaction tube 2, a temperature falling rate model storage section housing a plurality of semiconductor wafers W in the reaction tube 2, the temperature falling rate model storage stores a temperature falling rate model indicating the temperature and time in the reaction tube 2 until a predetermined temperature is reached, and a control section 50 for controlling the temperature and time of the interior of the reaction tube 2 to be the temperature and time indicated by the temperature falling rate model. The temperature falling rate model storage section stores a plurality of temperature falling rate models, the interior of the reaction tube 2 is sectioned into a plurality of zones, and the temperature falling rate model is set for each zone. The control section 50 sets a temperature falling rate model of different temperature falling rate on the basis of the zone, and heats the plurality of semiconductor wafers W housed in the reaction tube 2.SELECTED DRAWING: Figure 1
申请公布号 JP2016195167(A) 申请公布日期 2016.11.17
申请号 JP20150074088 申请日期 2015.03.31
申请人 TOKYO ELECTRON LTD 发明人 YAMAGUCHI TATSUYA;YOSHII KOJI;SHOJI MASABUMI
分类号 H01L21/205;C23C16/46;H01L21/02;H01L21/22;H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址