SILICON ELECTRO-OPTICAL MODULATOR

摘要

Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

主权项

1. A silicon electro-optical modulator comprising:
a waveguide core region including a p-type core region and an n-type core region; a p-type contact electrode region connected to the p-type core region by a plurality of p-type regions, each individual one of the plurality of p-type regions exhibiting a significantly different doping level than that exhibited in neighboring segments; and an n-type contact electrode region connected to the n-type core region by a plurality of n-type regions, each individual one of the plurality of n-type regions exhibiting a significantly different doping level than that exhibited in neighboring segments.