发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 A method of manufacturing a semiconductor device uses a semiconductor manufacturing apparatus including a turn table allowing placement of at least first and second semiconductor substrates and being capable of moving positions of the first and the second semiconductor substrates by turning, a first film forming chamber, and a second film forming chamber. The first and the second film forming chambers are provided with an opening capable of loading and unloading the first and the second semiconductor substrates by lifting and lowering the first and the second semiconductor substrates placed on the turn table. The method includes transferring the first and the second semiconductor substrates between the first and the second film forming chambers by turning the turn fable and lifting and lowering the first and the second semiconductor substrates placed on the turn table; and forming a stack of films above the first and the second semiconductor substrates.
申请公布号 US2016276204(A1) 申请公布日期 2016.09.22
申请号 US201514751603 申请日期 2015.06.26
申请人 Kabushiki Kaisha Toshiba 发明人 SAKATA Atsuko;Watanabe Kei;Wada Junichi;Kitamura Masayuki;Ishizaki Takeshi;Okuda Shinya;Ogihara Hirotaka;Wakatsuki Satoshi;Ikeno Daisuke
分类号 H01L21/687;C23C16/458;H01J37/34;H01L21/02 主分类号 H01L21/687
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus including a turn table configured to allow placement of at least a first semiconductor substrate and a second semiconductor substrate and configured to be capable of moving positions of the first semiconductor substrate and the second semiconductor substrate by turning, a first film forming chamber, and a second film forming chamber, the first film forming chamber and the second film forming chamber each being provided with an opening configured to be capable of loading and unloading the first semiconductor substrate and the second semiconductor substrate by lifting and lowering of the first semiconductor substrate and the second semiconductor substrate placed on the turn table, the method comprising: transferring the first semiconductor substrate and the second semiconductor substrate between the first film forming chamber and the second film forming chamber by turning the turn table and lifting and lowering the first semiconductor substrate, and the second semiconductor substrate placed on the turn table; and forming a stack of films above the first semiconductor substrate and the second semiconductor substrate.
地址 Tokyo JP