METHOD TO IMPROVE FINFET CUT OVERLAY

摘要

A patterned photoresist having an overlay tolerance of (x+y)/2 is formed over preselected hard mask portions or semiconductor fin portions, wherein x is a width of a semiconductor fin and y is a distance between a neighboring pair of semiconductor fins. Hard mask portions or semiconductor fin portions not protected by the patterned photoresist are then removed by an isotropic etching process. The patterned photoresist is removed. In some embodiments, the remaining hard mask portions are employed as fin forming etch masks.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a plurality of hard mask portions on a semiconductor substrate; forming a patterned photoresist having an overlay tolerance of (x+y)/2 over preselected hard mask portions, wherein x is a width of a semiconductor fin and y is a distance between a neighboring pair of semiconductor fins; removing hard mask portions not protected by said patterned photoresist by an isotropic etching process; removing said patterned photoresist; and forming semiconductor fins in an upper semiconductor material portion of said semiconductor substrate, wherein said remaining hard mask portions are employed as fin forming etch masks.