| 摘要 |
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first opening, a second opening, and a third opening which are formed by performing first etching and second etching. By the first etching, the first insulator is etched for forming the first opening, the second opening, and the third opening. By the second etching, the first metal oxide, the second insulator, the third insulator, the fourth insulator, the second metal oxide, and the fifth insulator are etched for forming the first opening; the first metal oxide, the second insulator, and the third insulator are etched for forming the second opening; and the first metal oxide is etched for forming the third opening. |
| 主权项 |
1. A method for manufacturing a semiconductor device:
the semiconductor device comprising:
a first insulator;a second insulator over the first insulator;a first conductor embedded in the second insulator;a third insulator over the second insulator and the first conductor;a first metal oxide over the third insulator;a fourth insulator over the first metal oxide;a fifth insulator over the fourth insulator;an oxide semiconductor over the fifth insulator;a second conductor and a third conductor over the oxide semiconductor;a sixth insulator over the fourth insulator, the second conductor, the third conductor, and the oxide semiconductor;a seventh insulator over the sixth insulator;a fourth conductor over the seventh insulator;a second metal oxide over the sixth insulator and the fourth conductor;an eighth insulator over the second metal oxide;a first opening reaching the first conductor through the eighth insulator, the second metal oxide, the seventh insulator, the sixth insulator, the fourth insulator, the first metal oxide, and the third insulator;a second opening reaching the second conductor through the eighth insulator, the second metal oxide, the seventh insulator, and the sixth insulator; anda third opening reaching the fourth conductor through the eighth insulator and the second metal oxide, the method comprising the steps of: forming a fifth conductor over the eighth insulator; forming a ninth insulator over the fifth conductor; forming a resist mask over the ninth insulator by a lithography method; etching part of the ninth insulator and part of the fifth conductor to form a hard mask layer including the ninth insulator and the fifth conductor; and performing first etching and second etching using the hard mask layer as a mask to form the first opening, the second opening, and the third opening, wherein in the first etching, the eighth insulator is etched for forming the first opening, the second opening, and the third opening, and wherein in the second etching, the second metal oxide, the seventh insulator, the sixth insulator, the fourth insulator, the first metal oxide, and the third insulator are etched for forming the first opening, the second metal oxide, the seventh insulator, and the sixth insulator are etched for forming the second opening, and the second metal oxide is etched for forming the third opening. |
